PIN Photodiode Question & Answers June 25, 2022 By WatElectronics This article lists 100 PIN Photodiode MCQs for Engineering Students. The PIN Photodiode Questions & Answers below include solutions and links to the relevant topic. This is helpful for users who are preparing for their exams and interviews, or professionals who would like to brush up on the fundamentals of the PIN Photodiode. The PIN photodiode is one type of photodetector. It is widely used in fiber optic systems because of its small size, high sensitivity, and fast response. The PIN photodetector and avalanche photodiode are the two types of photodiodes. If we want to increase the width of the PN junction, we can somehow reduce the diffusion time. We can only increase reverse bias voltage up to a particular point, so that’s why the PIN is designed, so instead of just having a P and N, we create an intrinsic region in the design of the junction itself. In PIN photodiode, 'I' is the intrinsic region so that the electron pair is allowed to experience more drift than the diffusion so then the effective time scales can be brought down. The advantages of PIN diodes are they have low noise, low dark current, low bias voltage, and low junction capacitance. The P-type layer, N-type layer, and I-intrinsic layers are three layers present in PIN photodiodes. In PIN photodiodes the sensitivity is less, the signal-to-noise ratio is poor compared to avalanche photodiodes, and PIN photodiodes have good temperature stability. 1). Which one of the following are generally gas filled tubes? Photodiode Phototransistor Phototube None of the above None Hint 2). What is the standard form of SPAD? Silicon Photon Avalanche Detector Silicon Photon Automatic Detector Silicon Photon Avalanche Device None of the above None Hint 3). The PN junction offers very low resistance in ________________ bias? Forward Reverse Both a and b None of the above None Hint 4). The width of depletion region in PN junction decreases in ____________biasing? Forward Reverse Both a and b None of the above None Hint 5). The current in PN junction diode will flow in forward bias due to _____________ carriers? Majority Minority Both a and b None of the above None Hint 6). The effective resistance of PN junction decreases in _______________ bias condition? Forward Reverse Both a and b None of the above None Hint 7). The energy of PN junction decreases in _______________ bias condition? Forward Reverse Both a and b None of the above None Hint 8). The barrier potential in PN junction diode decreases in ____________ bias condition? Reverse Forward Both a and b None of the above None Hint 9). The wave length range of germanium is from ____________ meters? 550-850 nm 850-950 mm 1310-1550 m 1000-1500 mm None Hint 10). In which one of the following, photo diodes sensitivity is less? PIN Avalanche Both a and b None of the above None Hint Read more about Avalanche Photodiode 11). In which one of the following photodiodes, the signal to noise ratio is poor? PIN Avalanche Both a and b None of the above None Hint 12). How many layers does PIN photodiodes has? One Two Three Four None Hint 13). The figure shown below is a schematic diagram of __________ diode? Schottky Avalanche PIN diode None of the above None Hint 14). The wavelength range of silicon photodetector material is ______________ meters? 100-300 mm 400-1060 mm 400-1060 nm None of the above None Hint 15). The energy gap is ___________ ev in silicon photodetector material? 1.17 2.23 5.67 5.89 None Hint 16). What is the standard form of PMT? Photomultiplier Tube Photodetector Tube Photonic Tube None of the above None Hint 17). The wavelength range of lead sulfide material is ______________ meters? <1000-3500 mm <1000-3500 cm <1000-3500 nm None of the above None Hint 18). The responsivity of silicon PN type photodetector is ___________________? 0.41-0.7 A/W 0.6-0.8 W 0.80 m 0.70 m None Hint 19). How many junctions will be there in general purpose PIN diode? One Two Three Four None Hint 20). Which one of the following photo diodes has good temperature stability? PIN Avalanche Both a and b None of the above None Hint 21). The conversion efficiency of PIN photodiode is ___________________ amperes per watts? 0.5 to 1 1 to 2 0.5 to 100 10 to 100 None Hint 22). The energy gap is ___________ ev in germanium photodetector material? 0.775 2.23 5.67 5.89 None Hint 23). Which one of the following diodes can be used for microwave applications? Add description here! PIN PN Both a and b None of the above None Hint 24). The silicon PIN photo diode is controlled by ____________? Current Voltage Both a and b None of the above None Hint 25). The wavelength range of germanium photodetector material is ______________ meters? 100-300 mm 400-1060 mm 600-1600 nm None of the above None Hint PIN Photodiode MCQs for Quiz 26). What is the standard form of SIPM? Silicon Photomultipliers Silicon Photon Silicon Photodetector None of the above None Hint 27). Which one of the following is a type of vacuum device? Multichannel plates Imaging arrays photosensor Micropattern gas chamber None of the above None Hint 28). The responsivity of InGaAs avalanche photodetector is ___________________? 0.41-0.7 W 0.6-0.8 W 0.80 A/W 0.70 m None Hint 29). Which one of the following diodes comes under high frequency band (general rectification) diode? Rectifier diodes Switching diodes Schottky barrier diodes PIN diodes None Hint 30). The low reverse bias is required in _____________ type of photo diode? PIN Avalanche Both a and b None of the above None Hint 31). Which one of the following photo diodes is cheaper? Avalanche PIN Both a and b None of the above None Hint 32). The energy gap is ___________ ev in GaAs photodetector material? 1.424 2.23 5.67 5.89 None Hint 33). Which one of the following diodes comes under standard frequency band (general rectification) diode? Rectifier diodes Band switching diodes Detection switching diodes PIN diodes None Hint 34). How many terminals does silicon PIN photodiode consists? One Two Three Four None Hint 35). The typical off capacitance value of silicon PIN photodiode is _____________? 0.05 mm 0.01 mm 0.005 PF/mm None of the above None Hint 36). The typical amount of power needed in silicon PIN photodiode is _____________? Add description here! 0.05 mm 0.01 mm 10 mW None of the above None Hint 37). The low frequency limit in silicon PIN photodiode is ____________? 10 MHz 0.01 mm 10 mW None of the above None Hint 38). In silicon PIN photodiode, the break down voltage is around ________________? 20 m 34 W 50 V None of the above None Hint 39). The typical on resistance value of silicon PIN photodiode is _____________? 0.05 ohm/mm 0.01 mm 0.005 PF/mm None of the above None Hint 40). In which one of the following photodiodes, the response time is less? PIN Avalanche Both a and b None of the above None Hint 41). The wavelength range of PIN photodiodes is between ____________ micro meters? 0.6 to 1 0.1 to 0.4 0.6 to 1.8 0.6 to 14 None Hint 42). The energy gap is ___________ ev in InGaAs photodetector material? 0.73 2.23 5.67 5.89 None Hint 43). The responsivity of germanium is ___________________ watts? 0.41-0.7 m 0.6-0.8 mm 0.80 W 0.70 A/W None Hint 44). What is the range of dark current in silicon PN photodetector? 1-5 nA 10 A/W 1000 W 30 W None Hint 45). In which one of the following effect, the electric current will generate? Photelectric effect Photovoltaic effect Both a and b None of the above None Hint 46). In which one of the following effect, the electrons are emitted? Photelectric effect Photovoltaic effect Both a and b None of the above None Hint 47). The reverse current effect damages the junction in _______________ diode? PN junction Zener Both a and b None of the above None Hint 48). The break down in Zener diode occurs in ______________ voltages? Higher Lower Either higher or lower None of the above None Hint 49). What is the standard form of FRD? Fast Recovery Diodes Fast Reverse Diodes Full Recovery Diodes None of the above None Hint 50). In which one of the following photodiodes, the external amplifier is required? PIN Avalanche Both a and b None of the above None Hint PIN Photodiode MCQs for Exams 51). The energy gap is ___________ ev in InGaAsP photodetector material? 0.75-1.35 2.23 5.67 5.89 None Hint 52). The figure shown below is a symbol of _______________ phototransistor? NPN PNP PN junction None of the above None Hint 53). Which one of the following is a type of solid-state device? Multichannel plates Imaging arrays photosensor Imaging arrays photosensors None of the above None Hint 54). What is the range of dark current in germanium? 1-5 W 10 A/W 1000 nA 30 W None Hint 55). The wavelength range of GaAs photodetector material is ______________ meters? 650-870 nm 400-1060 mm 600-1600 mm None of the above None Hint 56). The responsivity of PIN photodiode is around ______________ ampere per watts? 10 A/W 12 A/W 11 A/W 1 A/W None Hint 57). In which one of the following effect the electrons are not emitted? Photelectric effect Photovoltaic effect Both a and b None of the above None Hint 58). The rise time of silicon PN type photodetector is _______________ ? 5-10 ns 0-100 m 1-2 mm None of the above None Hint 59). What is the range of dark current in InGaAs avalanche photodetector? 1-5 W 10 A/W 1000 mm 30 nA None Hint 60). Which one of the following photodiodes doesn’t have high intensity electric field region? PIN Avalanche Both a and b None of the above None Hint 61). The thermal noise of PIN photodiode is around ______________ watts per hertz? 10^6 W/Hz 10^2 W/Hz 10^-22 W/Hz 1 W/Hz None Hint 62). The dark current of PIN photodiode is around ______________? 10^6 W/Hz 10^2 W/Hz 10 nA 1 W/Hz None Hint 63). Which one of the following is a type of gaseous photodetector? Multichannel plates Imaging arrays photosensor Micropattern gas chamber None of the above None Hint 64). The wave length range of silicon PN photodetector is from ____________ meters? 550-850 nm 850-950 mm 1310-1550 m 1000-1500 mm None Hint 65). In how many modes does photodiodes can operate? One Two Three Four None Hint 66). Which one of the following modes is also known as zero bias mode? Photovoltaic Photoconductive Avalanche None of the above None Hint 67). In which one of the following bias, the depletion layer is very thin? Forward Reverse Both a and b None of the above None Hint 68). The order of current is ___________ amperes in reverse bias PN junction diode? Milli Micro Nano None of the above None Hint 69). The magnitude of current is zero in _______________ biased? Forward Reverse Both a and b None of the above None Hint 70). Which one of the following photodiodes has exhibit higher noise levels? PIN Avalanche Both a and b None of the above None Hint 71). The figure shown below is an equivalent circuit of __________ photodiode? Si photodiode Photoconductive Avalanche diode None of the above None Hint 72). The rise time of InGaAs avalanche photodetector is _______________ ? 5-10 mm 0-100 ns 1-2 mm None of the above None Hint 73). What is the standard form of CCD? Charge Coupled Detector Charge Charge Detector Coupled Coupled Detector None of the above None Hint 74). In which one of the following effectl, the electric current will not generate? Photelectric effect Photovoltaic effect Both a and b None of the above None Hint 75). The PN junction offers very high resistance in ________________ bias? Forward Reverse Both a and b None of the above None Hint PIN Photodiode MCQs for Interviews 76). The width of depletion region in PN junction increases in ____________biasing? Forward Reverse Both a and b None of the above None Hint 77). The current in PN junction diode will flow in reverse bias due to _____________ carriers? Majority Minority Both a and b None of the above None Hint 78). The effective resistance of PN junction increases in _______________ bias condition? Forward Reverse Both a and b None of the above None Hint 79). The energy of PN junction increases in _______________ bias condition? Forward Reverse Both a and b None of the above None Hint 80). The sensitivity range is from ____________ in PIN photodiode? 0-12 dB 1-10 dB 15-30 dB None of the above None Hint 81). The wave length range of InGaAs avalanche photodetector is from ____________ meters? 550-850 mm 850-950 mm 1310-1550 nm 1000-1500 mm None Hint 82). What is the rise time range of germanium? 5-10 mm 0-100 mm 1-2 ns None of the above None Hint 83). The barrier potential in PN junction diode increases in ____________ bias condition? Reverse Forward Both a and b None of the above None Hint 84). The order of current is ___________ amperes in forward bias PN junction diode? Milli Micro Nano None of the above None Hint 85). The wavelength range of InGaAsP photodetector material is ______________ meters? 800-1650 nm 400-1060 mm 600-1600 mm None of the above None Hint 86). The reverse current effect does not damage the junction in _______________ diode? PN junction Zener Both a and b None of the above None Hint Read more about Diodes 87). The break down in PN junction diode occurs in ______________ voltages? Higher Lower Either higher or lower None of the above None Hint 88). Which one of the following diodes can't be used for microwave applications? PIN PN Both a and b None of the above None Hint 89). How many junctions will be there in general purpose PN junction diode? One Two Three Four None Hint 90). The reverse bias voltage is from ____________ volts in PIN photodiode? 5-10 V 1-10 V 20-400 V None of the above None Hint 91). In which one of the following diode, reverse saturation currents is low? Schottky diode Normal diode Both a and b None of the above None Hint 92). In which one of the following diodes, the depletion diode created? Schottky diode Normal diode Both a and b None of the above None Hint 93). The forward voltage loss range is between ________________ in Schottky diodes? 0.2 to 1 V 0.2 to 10 V 0.2 to 1.5 V 0.2 to 0.3 V None Hint 94). In which one of the following diodes, the current flows in one direction? PN junction diode Zener diode Both a and b None of the above None Hint 95). The wavelength range of indium gallium arsenide photodetector material is ______________ meters? 900-1700 nm 400-1060 mm 600-1600 mm None of the above None Hint 96). In how many ways does the PIN photodiode can be constructed? One Two Three Four None Hint 97). In which one of the following diodes, the Schottky diode created? Schottky diode Normal diode Both a and b None of the above None Hint 98). The forward voltage loss range is between ________________ in normal diodes? 0.2 to 1 V 0.6 to 0.7 V 0.2 to 1.5 V 0.2 to 0.3 V None Hint 99). How many layers does PIN diode use? One Two Three Four None Hint 100). The wavelength region of PIN photodiode is from ___________ nm? 5-10 nm 1-10 nm 400-1000 nm None of the above None Hint For More MCQs Semiconductor Diode Questions & Answers Zener Diode Questions & Answers Schottky Diode Questions & Answers Avalanche Photodiode Questions & Answers Tunnel Diode Questions & Answers PN Junction Diode Questions & Answers Varactor Diode Questions & Answers Photodiode Questions & Answers Please fill in the comment box below. Time's up
