Difference between P-type and N-type Semiconductors

Both p and n are the basic semiconductors arrived from the concept of doping. Hence the basic difference between p and n-type is the way or the nature of the doping involved. Semiconductors can be differentiated as intrinsic and extrinsic as per the matter of purity concerned.  P-type and N-type semiconductors come under extrinsic semiconductors. Although they are categorized under the same category of extrinsic there behaviors are extremely different based on its dopants. However, they have Fermi levels lying towards conduction or valence band based on its type.

Comparison Between P-Type and N-Type Semiconductors

The difference between p-type & n-type semiconductors is discussed below.

P-Type Semiconductor	N-Type Semiconductor
(1)P-type is formed because it is doped with a trivalent impurity.	(1)N-type is formed because it is doped with a pentavalent impurity.
(2) As the impurity inserted is of third group elements it is responsible for creating a vacancy of the electrons termed as holes.	(2) In N-type, the impurity inserted is of a fifth group providing an excess of electrons.
(3) Holes formed here are termed as Acceptors.	(3) Electrons in the n-type are termed as Donors.
(4) The examples of trivalent impurity added are Al, Ga, In, etc.	(4) The examples of pentavalent impurity added are  P, As, Sb, etc.
(5) The concentration of holes is more in p-type.	(5) The concentration of electrons is more in n-type.
(6)The major concentration of the carrier’s movement can be observed from a higher level of concentration to a lower level of concentration.	(6) The majority of the carrier’s movement can be seen from lower level to higher level.
(7) As the holes concentration is high p-type carries the positive charge.	(7) In n-type, the electrons are the majority carriers. Hence the n-type preferably carries a negative charge.
(8)  The energy level of acceptor lies nearer too valence band but away from the conduction band.	(8) The energy level for donor lies nearer to the conduction band but away from the valence band.
(9)  Fermi level presence can be observed between the energy level of acceptor and the valence band.	(9) In this case, the presence of the Fermi level is in between the energy level of donor and the conduction band.
(10) Basic example for the formation of P-type semiconductor. Formation of P-Type Semiconductor	(10) Basic example for the formation of N-type semiconductor. Formation of N-Type Semiconductor
(11) Because of majority carrier influence, the density of holes is comparatively greater than the density of electrons.	(11) Whereas the majority of carriers in n-type are electrons. So here the density of electrons is comparatively greater than that of holes.

One can easily analyze that basic P-type is considered majority as holes and as its charge is positive it is abbreviated as P-type. Whereas the carrier concentration of electron is more in n-type it is abbreviated because of its negative charge in it. Hence the densities of particular charges are also dependent on its types of semiconductors.

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key Difference between P-Type & N-Type Semiconductors

Both p and n are the basic semiconductors that arrived from the concept of doping. Hence the basic difference between p and n-type is the way or the nature of the doping involved. Semiconductors can be differentiated as intrinsic and extrinsic as per the matter of purity concerned.

P-type & N-type semiconductors both come under extrinsic semiconductors. Although they are categorized under the same category of extrinsic there behaviors are extremely different based on its dopants. However, they have Fermi levels lying towards conduction or valence band based on its type.

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In this article, the basic differences involved in P-type and N-type semiconductors are classified is described. The factors such as Fermi levels, energy levels based on the types they move towards either conduction band or valence band is clearly observed. As the p-type and n-type is distinguished based on its addition of a type of impurity the existence of majority and minority carriers and the polarities are classified. As per the concentration concerned its density is described.