Field Effect Transistors Question & Answers May 31, 2021 By WatElectronics This article lists 100+ Field-Effect Transistor MCQs for engineering students. All the Field-Effect Transistor Questions & Answers given below includes solution and link wherever possible to the relevant topic. FET ( Field Effect Transistor) is one of the most important semiconductor devices. The main purpose of the design of FET is to overcome the limitation of BJT where there exists an emitter junction thus leading to low impedance level during forward bias conditions which further injects high noise level. A FET is a 3 terminal device consisting of Source, drain, and gate as the terminals. Where the source is the input terminal, drain is the output terminal and the gate is the mid terminal. The operation of FET mainly depends on either of the carriers that is either holes or electrons. They are classified into many types depending on the design characteristics such as JFET, MOSFET, Potential divider FET, etc. Where each of these FET operate in different regions according to their characteristics. Additionally a FET can be used as switching device operating in 3 regions namely active, saturation and cut-off regions. As compared to BJT, the FET has many advantages like better thermal stability, predicts less noise, can be used at high frequencies, and has high input impedance, because of these advantages the FET is preferred over BJT in many applications like integrated circuits, digital switch, amplifiers, amplitude modulation, etc. 1). How many terminals does the FET transistor have? One Two Three Four None Hint 2). The field-effect transistors used in ________ Amplifiers Analog switch Oscillator All of the above None Hint 3). The field-effect transistors has _________ Very high input impedance Small in size Low power consumption All of the above None Hint 4). Which one is a unipolar device? FET BJT Both a and b None of the above None Hint 5). The operation of the BJT relies on _________ Free electrons Holes Both a and b None of the above None Hint 6). How many types of FETs are there? One Two Three Four None Hint Read more about Field Effect Transistor 7). The current in FET flows between __________ terminals Drain and gate Drain and source Both a and b None of the above None Hint 8). What are the terminals of FET? Anode and cathode Source, gate, and drain Collector, emitter, and base None of the above None Hint 9). How many types of MOSFETs are there? One Two Three Four None Hint 10). How many types of JFETs are there? One Two Three Four None Hint 11). What are the terminals of BJT? Anode and cathode Source, gate, and drain Collector, emitter, and base None of the above None Hint 12). The advantages of FET are _________ It has better thermal stability It predicts less noise It can be used at high frequency All of the above None Hint 13). Which channel JFET consists of an N-type channel and two heavily dopped P-region? N-channel JFET P-channel JFET Both a and b None of the above None Hint 14). Which one is a current controlled device? BJT JFET MOSFET None of the above None Hint 15). In JFET the gate current is equal to _________ 1Amp 2 Amp 3 Amp 0 Amp None Hint 16). In BJT, the input voltage is equal to ________ 1V 0.1V 0.7V 10V None Hint 17). Which one is a linear amplifier? BJT JFET Both a and b None of the above None Hint 18). Which one is a bipolar device? BJT JFET Both a and b None of the above None Hint 19). The operation of FET relies on _________ Free electrons Holes Both a and b Either free electrons or holes None Hint 20). Which channel JFET consists of a P-type channel and two heavily dopped N-region? N-channel JFET P-channel JFET Both a and b None of the above None Hint 21). Which one -s a voltage-controlled device? BJT JFET Both a and b None of the above None Hint 22). In BJT the input resistance is lower due to ________ Forward bias Reverse bias None Hint 23). The noise level in BJT is _________ High Very low Moderate Low None Hint 24). Which one is a non-linear amplifier? BJT JFET Both a and b None of the above None Hint 25). What are the terminals of insulated gate bipolar transistor? Anode and cathode Source, gate, and drain Collector, emitter, and gate None of the above None Hint Field Effect Transistor Important MCQs 26).The insulated gate bipolar transistor used in _________ SMPS VFDS Both a and b None of the above None Hint 27). In FET the input resistance is higher due to ____________ Forward bias Reverse bias None Hint 28). In FET the noise level is ________ High Very low Moderate Low None Hint 29). The maximum voltage rating of BJT is between ________ 1-5KV 1-10KV 1-20KV 1-30KV None Hint 30). The maximum voltage rating of MOSFET is ________ 1KV 2KV 3KV 4KV None Hint 31). The maximum voltage rating of IGBT is ________ 1KV 2KV 3.5KV 4KV None Hint 32). The operating frequency of BJT is _______ High Very low Moderate Low None Hint 33). What are the advantages of the MOSFET dosimeter? Large dynamic range It has good spatial resolution It has good isotropy All of the above None Hint 34). The maximum current rating of IGBT is _______ 9KA 6KA 1.2KA 5KA None Hint 35). The operating frequency of the MOSFET is _________ Fast Very low Moderate Low None Hint 36). What are the disadvantages of MOSFET dosimeter? Sensitivity to bias instability Radiation damage Temperature damage All of the above None Hint 37). The characteristics of JFET are divided into _____ parts One Two Three Four None Hint 38). _______________ characteristics gives the relationship between drain current and drain to source voltage for different values of the gate to source voltage V-I characteristics Transfer characteristics Both a and b None of the above None Hint 39). The maximum current rating of BJT is ____________ 100A 200A 300A 400A None Hint 40). In drain characteristics when drain to source voltage is increased in the ohmic region then the drain current _________ Increases Decreases No change None Hint 41). Who invented FETs? Julius Edgar Lilienfeld Schockley Harris None of the above None Hint 42). _________ is a metal-insulator semiconductor JFET MOSFET Both a and b None of the above None Hint 43). _________ is a metal semiconductor JFET MOSFET MODFET None of the above None Hint 44). The maximum current rating of MOSFET is _________ 100A 200A 300A 400A None Hint 45). The breakdown voltage of 1µm MESFET is about ________ 10V 15V 20V 30V None Hint 46). In FET configuration the voltage gain of the common gate is __________ High Very low Moderate Low None Hint 47). In FET configuration the current gain of the common gate is __________ High low Moderate Very high None Hint 48). In FET configuration the input-output phase relationship of the common gate is __________ Zero deg 90 degrees 180 degrees None of the above None Hint 49). The electrical gate oxide thickness of GNRFET is around ______ 2.0nm 1nm 3nm 6nm None Hint 50). The electrical gate oxide thickness of N-type MOSFET is around ______ 1.0nm 1nm 3nm 6nm None Hint Field Effect Transistor Important MCQs with Hints 51). ________ characteristics give the relationship between drain current and gate to source voltage for different values of drain to source voltage V-I characteristics Transfer characteristics Both a and b None of the above None Hint 52). In FET configuration the voltage gain of the common drain is __________ High low Moderate Very high None Hint 53). In FET configuration the current gain of the common drain is __________ High low Moderate Very low None Hint 54). In FET configuration the input-output phase relationship of the common drain is __________ Zero degrees Ninety degrees One hundred and eighteen degrees None of the above None Hint 55). The electrical gate oxide thickness of P-type MOSFET is around ______ 1.0nm 1nm 3nm 1.6nm None Hint 56). The value of the sub threshold swing of GNRFET is _________ 70.1704mv/decade 80.1704mv/decade 60.1704mv/decade 50.1704mv/decade None Hint 57). The value of the drain induced barrier lowering of GNRFET is __________ 70.1704mv/decade 80.1704mv/decade 40.7448mv/decade 50.1704mv/decade None Hint 58). The value of the sub threshold swing of N-type MOSFET is _________ 70.1704mv/decade 61.7527mv/decade 60.1704mv/decade 50.1704mv/decade None Hint 59). The value of the drain induced barrier lowering of N-type MOSFET is __________ 70.1704mv/decade 80.1704mv/decade 40.7448mV/V 35.2515mv/decade None Hint 60). The switching frequency of BJT is around ______ 1KHz 2KHz 4KHz 5KHz None Hint 61). The on-state voltage drop of BJT is between ___________ 1-2KHz 2-3KHz 4-5KHz 5-6KHz None Hint 62). The voltage ratings of BJT is around ______ 1KV 2KV 3KV 4KV None Hint 63). The voltage ratings of MOSFET is around ______ 500V 200V 300V 400V None Hint 64). The voltage gain of the common source in FET is ________ High Very low Medium Low None Hint 65). In FET configuration the current gain of the common source is ___________ High Very low Moderate Low None Hint 66). In FET configuration the input-output phase relationship of the common source is __________ Zero degrees 90 degrees 180 degrees None of the above None Hint 67). The value of the sub threshold swing of P-type MOSFET is _________ 70.7253mv/decade 80.1704mv/decade 60.1704mv/decade 50.1704mv/decade None Hint 68). The value of the drain induced barrier lowering of P-type MOSFET is __________ 70.1704mv/v 80.1704mv/v 36.6697mv/v 50.1704mv/v None Hint 69). The voltage rating of IGBT is ____________ 1.2KV 2.2KV 3.3KV 4.5KV None Hint 70). The switching frequency of MOSFET is ________ 1MHz 2MHz 3MHz 4MHz None Hint 71). The on-state voltage drop of IGBT is between ________ 1-2V 2-3V 3-4V 4-5V None Hint 72). The switching frequency of IGBT is __________ 1200KHZ 1300KHZ 1100KHZ 100KHZ None Hint 73). How many types of OFET sensors are there? One Two Three Four None Hint 74). Which is used as a gate insulator in SG-FET? Ferroelectric material Air Both a and b None of the above None Hint 75). Which is used as a gate insulator in FE-FET? Ferroelectric material Air Both a and b None of the above None Hint Field Effect Transistor MCQs for Exams 76). Which one is a gas-sensitive FET? Catalytic gate field-effect transistor Suspended gate field-effect transistor Solid electrolyte based field-effect transistor All of the above None Hint 77). For ammonia, at 300 degrees the response time of silicon carbide FET is below _______ 100ms 200ms 300ms 400ms None Hint 78). For hydrogen, at 550 degrees the response time of sic-FET is below _______ 100ms 20ms 300ms 400ms None Hint 79). The gas sensors that are based on silicon carbide FETs are used up to _______ 200 degrees 300 degrees 500 degrees 800 degrees None Hint 80). The JFET pinc-off voltage is about _________ 1V 2V 3V 5V None Hint 81). The input impedance is high in _______ JFET Crystal diode MOSFET None of the above None Hint 82). Which one is having the lowest noise level? Tetrode JFET Triode None of the above None Hint 83). In which region JFET acts like resistance? Ohmic Saturation Breakdown None of the above None Hint 84). An N-channel JFET _________ are the charge carriers Protons Neutrons Holes Electrons None Hint 85). In which region JFET is used normally? Ohmic Saturation Breakdown None of the above None Hint 86). In which mode JFET can operate? Enhancement Depletion Both a and b None of the above None Hint Read more about JFET 87). The JFET characteristics are similar to __________ Pentode MOSFET SIC-FFT None of the above None Hint 88). The channel length of tunnel TFET is ___________ 1nm 4nm 6nm 10nm None Hint 89). The gate oxide thickness of the tunnel TFET is around _________ 1.5nm 2.3nm 0.77nm 6nm None Hint 90). How many types of band-to-band tunneling are there? One Two Three Four None Hint 91). Fin field-effect transistor are used to design __________ Comparator Integrator Processors None of the above None Hint 92). MOSFET drives __________ current in saturation region High Low Very low Infinite None Hint 93). Who invented BJT? Julius Edgar Lilienfeld Schockley Harris None of the above None Hint 94). In which year the BJT transistors are invented? 2000 1998 1940 1947 None Hint Read more about Bipolar Junction Transistor 95). The width range of MOSFET is around ______ 3 to 400µm 4 to 400µm 5 to 400µm 2 to 500µm None Hint 96). The threshold voltage is _________ in enhancement type metal oxide semiconductor field effect transistor Positive Negative Zero Infinite None Hint 97). ___________ type of MOSFET can be used as a switch Enhancement Depletion None Hint 98). How many P-N junctions are there in MOSFET? One Two Three Four None Hint 99). In which type of MOSFET the threshold voltage is negative? Enhancement Depletion None Hint Read more about MOSFET 100). What is the standard form of MIGFET? Maximum Independent Gate Field Effect Transistor Minimum Independent Gate Field Effect Transistor Multiple Independent Gate Field Effect Transistor None of the above None Hint Field Effect Transistor MCQs for Quiz 101). When MOSFET conductance is one then MOSFET is __________ ON OFF None Hint 102). The linear resistance of the MOSFET controlled by ___________ Gate to source voltage Drain to source voltage Both a and b None of the above None Hint 103). The fin field-effect transistor always have __________ Low current drive Low input signal High current drive None of the above None Hint 104). The length of MOSFET is in the range of ________ 1 to 2µm 1 to 4µm 1 to 8µm 1 to 10µm None Hint 105). The fin field-effect transistor is a _______ transistor Polar Non-polar Dipole None of the above None Hint 106). The gain in MOSFET is always ____________ High Low Infinite Zero None Hint 107). MOSFET is a _____ device Unidirectional Bidirectional Multidirectional None of the above None Hint 108). In MOSFET, the induced channel is also known as __________ Inversion Induction Inversion or induction None of the above None Hint 109). The flex FET is a _________ MOSFET Planar Single gate Non-polar None of the above None Hint 110). The gate current is _____ in IGFET High Low Zero Infinite None Hint 111). The MOSFET will OFF when conductance is ______ High Low Zero Infinite None Hint 112). How many P-regions and N-regions does the P-N-P transistor have? Two P-regions and One N-region Two P-regions and Two N-region Two P-regions and Four N-region Four P-regions and One N-region None Hint 113). ______ is a point of reference in JFET Gate Emitter Source None of the above None Hint 114). What are the main disadvantages of field-effect transistor? It has a high gain bandwidth product It has a low gain bandwidth product Low input impedance None of the above None Hint 115). The resistance of FET increases with ______ of temperature Increase Decrease None Hint 116). In which region does FET operate for an amplifier? Avalanche breakdown Pinch-off Both a and b None of the above None Hint 117). The trans-conductance of field-effect transistor depends on ________ Gate current Drain supply Gate to source voltage None of the above None Hint 118). In ohmic region the field-effect transistor used as voltage variable ________ Resistor Capacitor Inductor None of the above None Hint 119). In a field-effect transistor the gate is ________ Heavily dopped Lightly dopped None Hint 120). For a junction field-effect transistor the drain current remains _______ above the pinch-off voltage Constant Increases Decreases Infinity None Hint 121). The common drain amplifier voltage gain is always ___________ Zero One Infinity None of the above None Hint 122). The input impedance of the common gate amplifier is __________ Low High None Hint 123). In a filed-effect transistor the channel is ________ Lightly dopped Heavily dopped None Hint 124). _______ is a foundation of N-channel depletion type MOSFET Gate Drain Substrate None of the above None Hint 125). What is the standard form of CNFET? Common Field Effect Transistor Carbon Nanotube Field Effect Transistor Carbon Fin Field Effect Transistor None of the above None Hint Field Effect Transistor MCQs for Students 126). The channel length of the FINFET is around _______ 10nm 20nm 32nm 50nm None Hint 127). The effective channel length of FINFET is around _______ 10nm 25.6nm 32nm 50nm None Hint 128). The thickness of FIN in FINFET is around _______ 1nm 2nm 4nm 8nm None Hint 129). In FINFET the height of the FIN is around ________ 10nm 25.6nm 32nm 50nm None Hint 130). In FINFET the oxide thickness is about ________ 1.6nm 25.6nm 32nm 50nm None Hint 131). What is the standard form of IGFINFET? Independent Field Effect Transistor Independent FIN Field Effect Transistor Dependent Field Effect Transistor None of the above None Hint 132). What is the standard form of SB-CNFET? Schottky Barrier Carbon FET Schottky Barrier Carbon Nanotube FET Schottky Base Carbon Field Effect Transistor None of the above None Hint 133). The supply voltage of non-optimized CNFET is _______ 0.2V 0.4V 0.8V 0.9V None Hint 134). The CNT diameter of non-optimized CNFET is around __________ 1.0nm 1.2nm 1.5nm 2.0nm None Hint 135). The gate oxide thickness of non-optimized CNFET is around __________ 1nm 2nm 5nm 4nm None Hint 136). The CNT pitch of non-optimized CNFET is around __________ 10nm 20nm 50nm 40nm None Hint 137). The number of CNT’s in CNFET is ________ One Four Eight Ten None Hint 138). The work function contact of CNFET is around _________ 1.0ev 4.5ev 2.0ev 1.5ev None Hint 139). What is the standard form of ISFET? Ion-Selective Field Effect Transistor Ion Simplified Field Effect Transistor Ion Sensitive Field Effect Transistor None of the above None Hint 140). What is the standard form of MMFET? Modified Membrane Field Effect Transistor Membrane Modified Field Effect Transistor Membrane Membrane Field Effect Transistor None of the above None Hint 141). Through which pin current flows? Drain Source Gate None of the above None Hint 142). Which pin controls the biasing of the Field-Effect Transistor? Drain Source Gate None of the above None Hint 143). What are the applications of MPF102 JFET? Amplifier circuits Audio noise cancellation Pre-amplifier applications All of the above None Hint 144). The drain-source voltage of MPF102 JFET is around ________ 10V 25V 30V 40V None Hint 145). The maximum drain current of MPF102 JFET is around ______ 10mA 20mA 30mA 40mA None Hint 146). The drain gate voltage of MPF102 JFET is _______ 10V 25V 30V 40V None Hint 147). The silicon body thickness of TFET is about ______ 5nm 15nm 20nm 25nm None Hint 148). The gate length of the TFET is around ________ 50nm 10nm 60nm 15nm None Hint 149). The gate work function of TFET is around _______ 1.0ev 4.0ev 2.0ev 1.5ev None Hint 150). The gate-source overlap of TFET is around _________ 5nm 10nm 60nm 15nm None Hint 151). In which field-effect transistor the gate is not insulated from the channel? JFET MOSFET Both a and b None of the above None Hint 152). Which FET cannot operate in enhancement and depletion mode? JFET MOSFET Both a and b None of the above None Hint 153). The channel length of N-type junction less SOI ISFET is _________ 500nm 350nm 600nm 150nm None Hint 154). The channel thickness of N-type junction less SOI ISFET is _________ 50nm 35nm 60nm 20nm None Hint 155). The gate oxide thickness of N-type junction less SOI ISFET is _________ 4nm 3nm 6nm 2nm None Hint 156). The bipolar transistors are _________ Robust Cheap Voltage controlled device Both a and b None Hint 157). The MOSFET transistors are _______ Easily damaged by static More expensive than bipolar Both a and b None of the above None Hint 158). Which FET use in low noise applications? JFET MOSFET Both a and b None of the above None Hint 159). In D-MOSFET the silicon oxide layer present between _______ Gate terminal and substrate Gate terminal and channel None Hint 160). The channel width of N-type junction less SOI ISFET is _________ 4µm 3µm 6µm 2µm None Hint 161). The box thickness of N-type junction less SOI ISFET is _________ 400nm 300nm 145nm 120nm None Hint The box thickness of N-type junction less SOI ISFET is 145nm 4nm 3nm 1nm 20nm None Hint 163). The standard form of DM-FET is _________ Direct Modulated Field Effect Transistor Dielectric Modulated Field Effect Transistor Direct Demodulated Field Effect Transistor None of the above None Hint 164). The supply voltage of optimized CNFET is around _______ 1v 0.1v 0.6v None of the above None Hint 165). In optimized CNTFET, the CNT diameter is around ____________ 4nm 3.0nm 1.5nm 20nm None Hint 166). In optimized CNTFET, the oxide thickness is around ____________ 4nm 3.0nm 1.5nm 20nm None Hint 167). What is the standard form of DM-TEFT? Dielectric Modulated Field Effect Transistor Dielectric Modulated Tunnel Field Effect Transistor Direct Modulated Tunnel Field Effect Transistor None of the above None Hint 168). How many types of DG-TFETs are there? One Three Six Eight None Hint 169). In optimized CNTFET, the CNT pitch is around ____________ 4nm 3.0nm 6nm 20nm None Hint 170). In optimized CNTFET, the number of CNTs are ____________ One Two Six Eight None Hint Field Effect Transistor MCQs for Interviews 171). In optimized CNTFET, the work function constant is ____________ 1.1ev 2.2ev 5.1ev 2.0ev None Hint 172). What is the standard form of CFET? Complex Field Effect Transistor Complimentary Field Effect Transistor Constant Field Effect Transistor None of the above None Hint 173). The channel length of N-type conventional SOI ISFET is _______ 400nm 350nm 60nm 200nm None Hint 174). In which FET the channel is present? DMOSFET EMOSFET None Hint Read more about FET 175). The channel thickness of N-type conventional SOI ISFET is _______ 40nm 30nm 60nm 20nm None Hint 176). In DMOSFET the gate to source voltage is _________ Positive for depletion mode and negative for enhancement mode Negative for depletion mode and negative for enhancement mode Negative for depletion mode and positive for enhancement mode None of the above None Hint 177). In EMOSFET the gate to source voltage is _________ Positive for depletion mode and positive for enhancement mode Negative for depletion mode and negative for enhancement mode Negative for depletion mode and positive for enhancement mode None of the above None Hint 178). The gate oxide thickness of N-type conventional SOI ISFET is _______ 4nm 3nm 6nm 2nm None Hint 179). The channel width of N-type conventional SOI ISFET is _______ 4µm 3µm 6µm 1µm None Hint 180). The box thickness of N-type conventional SOI ISFET is _______ 140nm 300nm 60nm 145nm None Hint 181). The drain current in DMOSFET increases when the gate to source voltage becomes _______ Less negative Less positive More negative More positive None Hint 182). The drain current in EMOSFET increases when gate to source voltage becomes _______ Less negative Less positive More negative More positive None Hint 183). The stern layer thickness of N-type conventional SOI ISFET is _______ 1nm 3nm 6nm 4nm None Hint 184). In EMOSFET the silicon oxide layer present between _________ Gate terminal and channel Gate terminal and substrate None Hint 185). What is the standard form of MISFET? Metal Inductor Semiconductor Field Effect Transistor Metal Insulator Semiconductor Field Effect Transistor Metal Ionic Semiconductor Field Effect Transistor None of the above None Hint 186). The MOSFET is _______ Very sensitive Expensive Complicated to fabricate All of the above None Hint 187). What is the standard form of NEMFET? Nano Electrical Field Effect Transistor Nano Electro-mechanical Field Effect Transistor Nano Electronic Field Effect Transistor None of the above None Hint 188). Which transistor uses an insulator between body and gate? MOSFET JFET IGBT OFET None Hint 189). Which transistor uses an organic semiconductor in its channel? MOSFET JFET IGBT OFET None Hint 190). Which transistor combines gold nano-material and organic transistor? NOMFET JFET IGBT OFET None Hint 191). What is the standard form of NOMFET? Nano Particle Organic Material Field Effect Transistor Nano Particle Organic Memory Field Effect Transistor Nano Particle Organic Mechanical Field Effect Transistor None of the above None Hint 192). In BJT which one controls the flow of current? Base Collector Emitter None of the above None Hint 193). In BJT the current comes in from _________ Base Collector Emitter None of the above None Hint 194). In BJT the current goes out from _________ Base Collector Emitter None of the above None Hint 195). How many methods are there for EMOSFET biasing? One Two Three Four None Hint 196). In how many ways JFET can be connected to a circuit? One Two Three Four None Hint 197). __________ are the parameters of JFET AC drain resistance Amplification factor Trans-conductance All of the above None Hint 198). The JFET has ________ High efficiency Longer life Low efficiency Both a and b None Hint Read more about JFET Time's up
